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11.
With annealing temperature kept at 1573 K, the effects of annealing time on stability of the intrinsic defects in epitaxial unintentionally doped 4H-SiC prepared by low pressure chemical vapour deposition have been studied by electron spin resonance (ESR) and low temperature photoluminescence. This paper reports the results shown that annealing time has an important effect on the intrinsic defects in unintentionally doped 4H-SiC when annealing temperature kept at 1573 K. When the annealing time is less than 30 min, the intensity of ESR and photoluminescence is increasing with annealing time prolonged, and reaches the maximum when annealing time is 30 min. Then the intensity of ESR and photoluminescence is rapidly decreased with the longer annealing time, and much less than that of as-grown 4H-SiC when annealing time is 60 min, which should be related with the interaction among the intrinsic defects during the annealing process. 相似文献
12.
基于致动线模型的错列式两风机尾流场数值模拟 总被引:1,自引:1,他引:0
风电场中风机之间存在十分复杂尾流相互干扰现象,尾流相互干扰效应对风机的功率输出、叶片载荷等产生十分显著的影响。采用致动线模型以及计算流体力学方法,研究两风机之间的复杂尾流干扰效应。在保持两风机纵向间距一样的情况下,考虑两风机在不同横向间距下,数值模拟两风机的部分尾流相互干扰现象,分析两风机的气动功率输出特性、尾流速度变化特性、风轮平面附近轴向诱导因子分布特性,尾涡结构以及尾流干扰效应。数值模拟结果表明:在上下游风机在沿着流向方向距离保持不变的情况下,随着横向间距的变化,上下游风机的尾流存在十分复杂的尾流相互干扰效应,对下游风机的气动功率输出以及两风机风电场的整体流场产生了显著的影响。 相似文献