加速发展地浸与堆浸技术开发我国的矿产资源   总被引：3，自引：1，他引：2  

罗梅 《铀矿地质》1999,15(4):193-197

地浸与堆浸是当今世界上采冶开发低品位矿产资源最先进的技术。本文简要阐述了地浸与堆浸的基本概念及其优越性,论述了地浸与堆浸湿法冶金工艺研究的主要内容及该技术的发展与国内外应用现状,在阐述我国地浸与堆浸技术水平与国外相比存在的差距的基础上,提出了应用地浸与堆浸技术加速我国矿产资源开发的前景。  相似文献   

Recovery of Gallium and Arsenic from Gallium Arsenide Waste in the Electronics Industry     

Wei‐Ting Chen  Lung‐Chang Tsai  Fang‐Chang Tsai  Chi‐Min Shu 《洁净——土壤、空气、水》2012,40(5):531-537

Gallium arsenide (GaAs) has both high saturated electron velocity and high electron mobility, making it useful as a semiconductor material in a variety of applications, including light‐emitting diodes (LEDs), integrated circuits (ICs), and microwave appliances. A side effect of the use of gallium (Ga) is the production of a relatively large amount of hazardous waste. This study aimed at the recovery of Ga and arsenic (As) from GaAs waste using hydrometallurgical methods involving leaching and coagulation and a dry annealing process that involves annealing, vacuum separation, and sublimation by heating. Our research has shown that GaAs can be leached using nitric acid (HNO₃) to obtain 100% Ga and As with a leaching solution at pH 0.1, with subsequent adjustment of the leaching solution to pH 3 with sodium hydroxide (NaOH). Another method used a leaching solution at pH 2, then adjusting to pH 11 using NaOH. Ferric hydroxide (FeO(OH)) was added at 90°C after NaOH was added to the leaching solution. At pH 2 and 11, 55.5 and 21.9% of the As could be removed from the hazardous waste, respectively. The Ga could also be precipitated. When GaAs powder was heated to 1000°C over 3 h, 100% As removal was achieved, and 92.6% of the Ga was removed by formation of 99.9% gallium trioxide (Ga₂O₃). Arsenic was vaporized when the temperature was elevated to 1000°C, allowing arsenic trioxide (As₂O₃) to condense with 99.2% purity. The Ga₂O₃ powder produced was then dissolved and electrolyzed, allowing for 95.9% recovery of Ga with a purity of 99.9%.  相似文献