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1.
Albert M. Fowler K. Michael Merrill William Ball Arne Henden Fred Vrba Craig McCreight 《Experimental Astronomy》2002,14(1):61-68
The Orion program is a project to develop a 2K × 2K infrared focal plane using InSb p-on-n diodes for detectors. It is the
natural follow-up to the successful Aladdin 1K × 1K program started in the early 90's. The work is being done at the Raytheon
Infrared Operations Division (RIO, previously known as the Santa Barbara Research Center) by many of the same people who created
the Aladdin focal plane. The design is very similar to the successful Aladdin design with the addition of reference pixels,
whole array readout (no quadrants), two-adjacent-side buttability, and a packaging design that includes going directly to
the ultimate focal plane size of 4K × 4K. So far we have successfully made a limited number of hybrid modules with InSb detectors.
In this paper we will describe the design features and test data taken from some of these devices.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
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采用三级差分共源结构设计了一种基于65-nm CMOS工艺的W波段功率放大器,并利用两路电流型功率合成结构进行功率合成以提升输出功率.为了同时实现单差分转换、阻抗匹配、直流供电,匹配网络采用变压器结构.仿真结果显示,在1 V的电源电压下,该功率放大器的小信号增益为12.7~15.7 dB,3-dB带宽为84~104 GHz,饱和输出功率为14.6 dBm,峰值功率附加效率为9.7%.该功率放大器具有良好的大信号性能,且芯片的核心面积仅为0.115 mm2. 相似文献
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作为射电天文接收机系统的关键器件, 低噪声放大器的噪声和增益性能对接收机系统的灵敏度有重要影响. 采用100nm砷化镓赝配高电子迁移率晶体管(pseudomorphic High Electron Mobility Transistor, pHEMT)\lk工艺, 研制了一款可覆盖C波段(4--8GHz)的低噪声放大器(Low Noise Amplifier, LNA). 所设计的LNA采用3级共源级联放大拓扑结构, 栅极、漏极双电源供电. 常温下测试表明, 该LNA在4--8GHz频段内平均噪声温度为\lk60K, 在5GHz处获得最低噪声温度50K, 通带内增益($31\pm1.5$)dB, 输入输出回波损耗均优于10dB, 芯片面积为$2.1\times1.1$mm2, 可以应用于C波段射电天文接收机以及卫星通信系统等. 相似文献
4.
在比较反转触发器（TFF）的各种结构基础上,采用一种单时钟信号控制,实现高速分频的电路结构,设计实现了用于光通信中时钟数据恢复电路的八分频器。该八分频器使用动态负载,输出两路互补信号,采用SMIC0．18um1P6MCMOS工艺,使用Cadence公司的Spectre仿真器进行模拟验证,实验结果证明,在电源电压为1．8V的情况下,该八分频器的工作速度10GHz、功耗仅为4．705mW。 相似文献
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磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星—先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载荷,针对FMG载荷的需求,讨论了大面阵、高帧频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor, CMOS)图像传感器应用于太阳磁场观测的可行性.首先,基于滤光器型太阳磁像仪观测的原理,比较分析了目前CMOS图像传感器(可用的或是可选的两种快门模式)的特点,指出全局快门类型更适合FMG;其次搭建了CMOS传感器实验室测试系统,测量了CMOS图像传感器的像素增益及其分布规律;最后在怀柔太阳观测基地的全日面太阳望远镜上开展了实测验证,获得预期成果.在这些研究基础上,形成了FMG载荷探测器选型方向. 相似文献
8.
James W. Beletic Sean Adkins Barry Burke Robert Reich Bernie Kosicki Vyshnavi Suntharalingham Charlie Bleau Ray DuVarney Richard Stover Jerry Nelson Francois Rigaut 《Experimental Astronomy》2005,19(1-3):103-109
All of the extremely large telescopes (ELTs) will utilize sodium laser guide star (LGS) adaptive optics (AO) systems. Most of these telescopes plan to use the Shack-Hartmann approach for wavefront sensing. In these AO systems, the laser spots in subapertures at the edge of the pupil will suffer from spot elongation due to the 10 km extent of the sodium layer and the large separation from the projection laser. This spot elongation will severely degrade the performance of standard geometry wavefront sensing systems. In this paper, we present a CCD with custom pixel morphology that aligns the pixels of each subaperture with the radial extension of the LGS spot. This CCD design will give better performance than a standard geometry CCDs for continuous wave lasers. In addition, this CCD design is optimal for a pulsed sodium laser. The pixel geometry enables each subaperture to follow a laser pulse traversing the sodium layer, providing optimal sampling of a limited number of detected photons. In addition to novel pixel layout, this CCD will also incorporate experimental JFET sense amplifiers and use CMOS design approaches to simplify the routing of biases, clocks and video output. This CCD will attain photon-noise limited performance at high frame rates, and is being incorporated in the plans for the Thirty Meter Telescope (TMT). 相似文献
9.
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed. 相似文献
10.
基于100 nm硅基氮化镓（GaN）工艺，本文设计并实现了一款工作频段为20~26 GHz且增益平坦的可变增益低噪声放大器（VGLNA）.该放大器采用三级共源级级联来实现高增益，并通过调节第二、第三级的栅极偏置实现增益控制.测试结果表明，该放大器在工作频段内实现了超过20 dB的增益可变范围和±1.5 dB的增益平坦度，在增益可变范围内功耗为126 mW至413 mW.在最大增益状态下，该放大器在整个频段内可实现大于20 dB的小信号增益且噪声系数（NF）为2.95 dB至3.5 dB，平均输出1dB压缩点（OP1dB）约为14.5 dBm.该芯片的面积为2 mm2. 相似文献