| 化学气相沉淀法合成单晶金刚石膜实验探索 |
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| 引用本文： | 李晓,;陶隆凤,;陈美华,;王礼胜.化学气相沉淀法合成单晶金刚石膜实验探索[J].地质科学译丛,2009(2):11-14. |
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| 作者姓名： | 李晓 ;陶隆凤 ;陈美华 ;王礼胜 |
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| 作者单位： | [1]中国地质大学珠宝学院,湖北武汉430074; [2]石家庄经济学院宝石材料与工艺学院,河北石家庄050031 |
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| 摘 要： | 采用微波等离子体化学气相沉淀法合成了单晶金刚石膜，探索了化学气相沉淀法（CVD）单晶金刚石膜的生长机理。实验仪器采用石英管式微波等离子体化学气相沉积装置，种晶为3颗IaAB型天然金刚石原石，生长面近平行于（111）和（110）方向，生长温度为800℃，压力约为6kPa，时间约为8h。使用宝石显微镜和环境扫描电子显微镜观察分析了CVD单晶金刚石膜的生长表面形貌。结果表明，在生长面上可见明显的生长层，生长晶体无色透明，CVD单晶金刚石膜在生长面上横向外延生长，并形成定向的台阶状表面——“阶梯流”。在相同的条件下，（111）方向上生长的CVD单晶金刚石膜比（110）方向上的更有序。H2浓度的大小对CVD单晶金刚石膜的质量有影响。
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| 关 键 词： | 化学气相沉淀法 单晶金刚石膜 表面形貌 横向生长 |
Tentative Experiment of Synthesizing Single-Crystal Diamond Films by Chemical Vapor Deposition |
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| Institution: | LI Xiao , TAO Long-feng , CHEN Mei hua , WANG Li-sheng (1.Gemmological Institute, China University of Geosciences , Wuhan 430074, China ; 2. College of Gemmological and Material Technics, Shijiazhuang University of Economics, Shijiazhuang 050031, China ) |
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| Abstract: | The single-crystal diamond films are grown by the microwave plasma chemical vapor deposition method, as well as the growth mechanism is studied. The experiments are performed in a quartz chamber microwave plasma chemical vapor deposition reactor. Three natural IaAB-type diamond substrates are nearly parallel to （111）- and （110）-oriented. The growth temperature is 800℃,the pressure is about 6 kPa and the growth time is about 8 hours. The surface morphologies of CVD single-crystal diamond films are observed and analysed by microscope and ESEM, which show the lateral growth forming the step-bunched surface--＂step-flow＂. The CVD single-crystal diamond films are colourless and transparent. Under the same condition, CVD single-crystal diamond films grown on （111） direction show more orderly than that on （110）. Moreover, the hydrogen concentration could influence the quality of CVD single-crystal diamond films. |
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| Keywords: | chemical vapor deposition single-crystal diamond film surface morphology lateral growth |
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