| Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber |
| |
| 引用本文： | 王光红,张晓丹,许盛之,郑新霞,魏长春,孙建,熊绍珍,耿新华,赵颖.Reduction of the phosphorus contamination for plasma deposition of p—i—n microcrystalline silicon solar cells in a single chamber[J].海洋学报(英文版),2010,29(9). |
| |
| 作者姓名： | 王光红 张晓丹 许盛之 郑新霞 魏长春 孙建 熊绍珍 耿新华 赵颖 |
| |
| 作者单位： | Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China;Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Key Laboratory of Opto-electronic Information Science and Technology, Ministry of Education, Tianjin 300071, China |
| |
| 基金项目： | Project supported by Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602), Science and Technology Support Project of Tianjin of China (Grant No. 08ZCKFGX03500), National Basic Research Program of China (Grant Nos. 2 |
| |
| 摘 要： | This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si:H or μ c-Si:H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.
|
|
| 点击此处可从《海洋学报(英文版)》浏览原始摘要信息 |
| 点击此处可从《海洋学报(英文版)》下载免费的PDF全文 |
|
