Annealing of far infrared photoconductors with infrared diode lasers |
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| Authors: | U Schießl M Tacke J Wolf D Lemke |
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| Institution: | (1) Fraunhofer-Institut fuer Physikalische Messtechnik, Heidenhofstrasse 8, W-7800 Freiburg, Germany;(2) Max-Planck-Institut für Astronomie, Königsstuhl 17, W-6900 Heidelberg, Germany |
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| Abstract: | High sensitivity infrared detectors made from extrinsic semiconductors are used for astronomical applications on satellite missions in the earth orbit. High energy radiation reduces the sensitivity and changes the calibration of these photoconductors drastically. This process is reversible through on board annealing. Laser emission of mid infrared diode lasers was used for efficient annealing with low power dissipation. |
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