Conversion Gain and Interpixel Capacitance of Cmos Hybrid Focal Plane Arrays |
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| Authors: | Gert Finger James W Beletic Reinhold Dorn Manfred Meyer Leander Mehrgan Alan F M Moorwood Joerg Stegmeier |
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| Institution: | (1) European Southern Observatory, Garching, Germany;(2) Rockwell Scientific Company, Thousand Oaks, USA |
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| Abstract: | The conversion gain of optical and infrared focal plane CMOS hybrid arrays is a fundamental parameter, whose value computes into the derivation of other parameters characterizing the performance of a detector. The widespread “noise squared versus signal” method used to obtain the conversion gain can overestimate the nodal capacitance of the detector pixel by more than 20% for infrared arrays and by more than 100% for Si-PIN diode arrays. This is because this method does not take account of the capacitive coupling between neighboring pixels. A simple technique has been developed to measure the nodal capacitance directly by comparing the voltage change of an external calibrated capacitor with the voltage change on the nodal capacitor of the detector pixel. The method is elaborated in detail and has been verified with a Si-PIN diode array hybridized to a Hawaii-2RG multiplexer using an Fe
55 X-ray source. It is also in good agreement with a stochastic method based on 2D autocorrelation. |
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| Keywords: | CMOS hybrid conversion gain Hawaii-2RG HgCdTe interpixel capacitance quantum efficiency Si-PIN |
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