Oxidation of arsenite to arsenate on birnessite in the presence of light |
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| Authors: | Samantha L Shumlas Soujanya Singireddy Akila C Thenuwara Nuwan H Attanayake Richard J Reeder Daniel R Strongin |
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| Institution: | 1.Department of Chemistry,Temple University,Philadelphia,USA;2.Department of Geosciences,Stony Brook University,Stony Brook,USA |
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| Abstract: | The effect of simulated solar radiation on the oxidation of arsenite As(III)] to arsenate As(V)] on the layered manganese oxide, birnessite, was investigated. Experiments were conducted where birnessite suspensions, under both anoxic and oxic conditions, were irradiated with simulated solar radiation in the presence of As(III) at pH 5, 7, and 9. X-ray absorption spectroscopy (XAS) was used to determine the nature of the adsorbed product on the surface of the birnessite. The oxidation of As(III) in the presence of birnessite under simulated solar light irradiation occurred at a rate that was faster than in the absence of light at pH 5. At pH 7 and 9, As(V) production was significantly less than at pH 5 and the amount of As(V) production for a given reaction time was the same under dark and light conditions. The first order rate constant (kobs) for As(III) oxidation in the presence of light and in the dark at pH 5 were determined to be 0.07 and 0.04 h?1, respectively. The As(V) product was released into solution along with Mn(II), with the latter product resulting from the reduction of Mn(IV) and/or Mn(III) during the As(III) oxidation process. Post-reaction XAS analysis of As(III) exposed birnessite showed that arsenic was present on the surface as As(V). Experimental results also showed no evidence that reactive oxygen species played a role in the As(III) oxidation process. |
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