A Fully Depleted pn-Junction CCD for Infrared-, UV- and X- ray detection |
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| Authors: | C von Zanthier H Bräuninger K Dennerl R Hartmann G Hartner H Hippmann A Kaltenberger E Kastelic W Kink N Krause N Meidinger G Metzner E Pfeffermann M Popp C Reppin J Riedl D Stötter L Strüder J Trümper W Weber D Carathanassis S Engelhard Th Gebhart D Hauff G Lutz R H Richter H Seitz P Solc E Biehler H Böttcher E Kendziorra J Krämer B Pflüger R Staubert P Holl J Kemmer P Lechner B Maier H Soltau R Stötter E Bihler |
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| Institution: | (1) KETEK GmbH, Am Isarbach 30, D - 85764 Oberschlei heim, Germany;(2) Max-Planck -, Institut für extraterrestische Physik, Gieenbachstr., D-85740 Garching, Germany;(3) Max-Planck -Institut für Physik, Föhringer Ring 6, D - 80805 München, Germany;(4) Institut für Astronomie und, Astrophysik der Universität Tübingen, Waldhäuser Str. 64, D - 72076 Tübingen, Germany;(5) Institut für Astronomie und, Astrophysik der Universität Tübingen, Waldhäuser Stra 64, D - 72076 Tübingen, Germany |
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| Abstract: | This paper describes the performance of the Fully Depleted pn-junction CCD (pn-CCD) system, developed for ESA's XMM-satellite mission for soft x-ray imaging and spectroscopy in the single photon counting mode in the 100 eV to 10 keV photon range. The 58 mm x 60 mm large pn-CCD array, designed and fabricated at the Semiconductor Lab (Halbleiterlabor) of the Max-Planck-Institut, uses pn-junctions for registers and as backside structure. This concept naturally enables full depletion of the detector volume independent of the silicon wafer's resistivity and thickness, and as such make it an efficient detector for the x-ray region and the infrared. For high detection efficiency in the soft x-ray region and UV, an ultrathin pn-CCD backside deadlayer has been realized. Each pn-CCD-channel is equipped with its own on-chip JFET amplifier which, in combination with the CAMEX-amplifier and multiplexing chip, facilitates parallel readout and fast data rate: the cooled pn-CCD system can be read out at a data rate up to 3 MHz with an electronic noise floor of ENC < 5 e-. |
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