Raman scattering and lattice vibrations of Ni2SiO4 spinel at elevated temperature |
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| Authors: | Takamitsu Yamanaka Motohiko Ishii |
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| Institution: | 1. Mineralogical Institute, Faculty of Science, University of Tokyo Hongo, 113, Tokyo, Japan
2. National Institute for Research in Inorganic Materials 1-1 Namiki, Sakura-mura, Niihari-gun, 305, Ibaraki, Japan
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| Abstract: | Raman spectra of Ni2SiO4 spinel (O h 7 Z=8) have been measured in the temperature range from 20 to 600 °C and the Raman active vibrations (A 1g +E g +3F 2g ) have been assigned. A calculation of the optically active lattice vibrations of this spinel has been made, assuming a potential function which combines general valence and short range force constants. The values of the force constants at 20 and 500 °C have been calculated from the vibrational frequencies of the observed Raman spectra and infrared (IR) spectral data. The Ni spinel at 20 °C has a prominently small Si-O bond stretching force constant of K(SiO)=2.356 ～ 2.680 md/Å and a large Ni-O bond stretching constant of K(NiO)=0.843 ～ 1.062 md/Å and these force constants at 500 °C decrease to K(SiO)=2.327 ～ 2.494 md/Å and K(NiO)=0.861 ～ 0.990 md/Å. The Si-O bond is noticeably weakened at high temperatures, despite the small thermal expantion from 1.657 Å (20 °C) to 1.660 Å (500 °C). These changes of the interatomic force constants of the spinel at high temperatures are in accord with the thermal structure changes observed by X-ray diffraction study. The weakened Si-O bond is consistent with the fact that Si atoms in the spinel lattice can diffuse at significant rates at elevated temperature. |
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