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Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
Authors:Yue Fang-Yu  Chen Lu  Li Ya-Wei  Hu Zhi-Gao  Sun Lin  Yang Ping-Xiong and Chu Jun-Hao
Institution:Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract:
Keywords:As-doped HgCdTe  annealing influence  extrinsic/intrinsic impurities  modulated photoluminescence spectra
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