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| 合成金刚石单晶体层错的同步辐射形貌研究 | |
| 引用本文： | 于万里,罗永安,田玉莲,贾晓鹏.合成金刚石单晶体层错的同步辐射形貌研究[J].矿物学报,2003,23(2):103-108. |
| 作者姓名： | 于万里 罗永安 田玉莲 贾晓鹏 |
| 作者单位： | 1. 燕山大学,材料科学与工程学院,河北,秦皇岛,066004 2. 中国科学院,高能物理研究所,北京,100039 3. 吉林大学,超硬材料国家重点实验室,吉林,长春,130023 |
| 基金项目： | 北京正负电子对撞机国家实验室重点课题基金资助项目，河北省教育厅博士基金资助项目，燕山大学博士基金资助项目 |
| 摘 要： | 利用同步辐射对合成金刚石晶体中面状缺陷进行了形貌学研究。在晶体中观察到多个层错和一个由两个层错三角形组成的层错四面体。计算了层错及层错四面体各个边界的方向指数，确定了各个层错的面指数。根据层错的消像规律，确定了各个层错的位移矢量。除一个层错为Frank型简单层错外，其余层错皆为既具有Frank位移，又具有Sbockley位移的复合型层错，层错尺寸大小在0．68～1．15mm。 |
| 关 键 词： | 合成金刚石 同步辐射 石单晶体 层错 形貌特征 位移矢量 晶体缺陷 |
| 文章编号： | 1000-4734(2003)02-0103-06 |
| 修稿时间： | 2002年9月12日 |
RESEARCH ON STACKING FAULTS IN SYNTHESIZED DIAMOND CRYSTALS BY SYNCHROTRON RADIATION TOPOGRAPHY |
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| YU Wan-li,LUO Yon-gan,TIAN Yu-lian,JIA Xiao-peng.RESEARCH ON STACKING FAULTS IN SYNTHESIZED DIAMOND CRYSTALS BY SYNCHROTRON RADIATION TOPOGRAPHY[J].Acta Mineralogica Sinica,2003,23(2):103-108. | |
| Authors: | YU Wan-li LUO Yon-gan TIAN Yu-lian JIA Xiao-peng |
| Institution: | YU Wan-li 1 LUO Yon-gan 1 TIAN Yu-lian 2 JIA Xiao-peng 3 |
| Abstract: | Planar crystal defects in a synthesized diamond were studied by synchrotron radiation topography. Several stacking faults and a tetrahedron composed of two stacking faults in triangular were observed within the crystal. The direction index of each boundary of the faults was calculated and so was the planar index of the stacking faults. The displacement vectors of the stacking faults were determined by the disappearing image laws of the faults. All the stacking faults possess the characters of both frank and shockley types with only one exception. The forming mechanism of the faults was discussed. The stacking faults vary in size between 0.68 and 1 15 mm, which have not yet been found in both synthesized and natural diamonds. |
| Keywords: | synthesized diamond stacking fault synchrotron radiation |
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