On the Relationship between Refractive Index and Density for SiO2-polymorphs |
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| Authors: | B Marler |
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| Institution: | 1. Mineralogisch-petrographisches Institut der Universit?t Kiel, Olshausenstr. 40-60, D-2300, Kiel, West Germany
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| Abstract: | Five different refraction formulas were applied to SiO2 polymorphs in order to determine the most suitable refractive index-density relation. 13 SiO2 polymorphs with topological different tetrahedral frameworks are used in this study including eight new low density SiO2 polymorphs — so called “guest free porosils”. These SiO2 polymorphs cover a density range from 1.76 to 2.92 g/cm3. The mean refractive indices (ovn) of the porosils have been determined by the immersion method, the densities (ρ) were calculated from the unit cell parameters. Assuming the polarizability (α) of all SiO2 polymorphs to be constant the general refractivity formula $$\{ 2\overline {11} 0\} \langle 0001\rangle $$ turned out to be the most suitable for SiO2 polymorphs. Regression analysis yields an electronic overlap parameter b=1.2(1). |
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