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a-Si:H/c-Si 异质结太阳电池 J-V 曲线的 S-Shape 现象
引用本文:钟春良,耿魁伟,姚若河.a-Si:H/c-Si 异质结太阳电池 J-V 曲线的 S-Shape 现象[J].海洋学报,2010,32(9):6538-6544.
作者姓名:钟春良  耿魁伟  姚若河
作者单位:华南理工大学电子信息学院,广州 510640;华南理工大学电子信息学院,广州 510640;华南理工大学电子信息学院,广州 510640
摘    要:通过异质结界面分析与 AMPS 模拟计算研究了 a-Si:H/c-Si 异质结太阳电池在低温工作、a-Si:H 层低掺杂、高价带补偿以及高界面态时光态 J-V 曲线出现 S-Shape 现象的物理过程,总结了 S-Shape 现象的物理原因.分析结果表明,当空穴输运受到界面势垒的限制时,空穴在 c-Si 界面附近聚集,能带重新分配,c-Si 耗尽区的电场减小,更多的电子从 c-Si 准中性区反转至 c-Si 界面及耗尽区与空穴复合,复合速率显著增大,光电流的损失显著增大,光态 J-V<

关 键 词:模拟  异质结太阳电池  a-Si:H/c-Si  异质结
修稿时间:1/6/2010 12:00:00 AM

S-Shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell
Zhong Chun-Liang,Geng Kui-Wei and Yao Ruo-He.S-Shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell[J].Acta Oceanologica Sinica (in Chinese),2010,32(9):6538-6544.
Authors:Zhong Chun-Liang  Geng Kui-Wei and Yao Ruo-He
Institution:School of Electronics and Information Engineering, South China Universityof Technology, Guangzhou 510640, China;School of Electronics and Information Engineering, South China Universityof Technology, Guangzhou 510640, China;School of Electronics and Information Engineering, South China Universityof Technology, Guangzhou 510640, China
Abstract:In this paper the physical mechanism of the S-shaped J-V characteristics of (p) a-Si:H/(n) c-Si heterojunction solar cell at low working temperatures, low impurity concentrations in the a-Si:H layer, high valence band offsets or high interface defect densities is studied by heterojunction interface analysis and AMPS simulations. The results show that the barrier at the amorphous/crystalline interface hinders the collection of photogenerated holes. A high hole accumulation at the interface, in combination, causes a shift of the depletion region from the c-Si into the a-Si:H. This leads to the electric field decreasing, and the enhanced recombination inside the c-Si depletion region causes a significant current loss. It results in the S-shaped J-V characteristics.
Keywords:simulation  solar cell  a-Si:H/c-Si heterojunction
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