| 低维半导体异质结中的量子相干红外发射机理理论研究 |
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| 引用本文： | 孙伟峰,李美成,赵连城.低维半导体异质结中的量子相干红外发射机理理论研究[J].海洋学报,2010,32(9):6185-6192. |
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| 作者姓名： | 孙伟峰 李美成 赵连城 |
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| 作者单位： | 哈尔滨工业大学材料科学与工程学院,信息材料科学与技术系,哈尔滨 150001;哈尔滨工业大学材料科学与工程学院,信息材料科学与技术系,哈尔滨 150001;哈尔滨工业大学材料科学与工程学院,信息材料科学与技术系,哈尔滨 150001 |
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| 基金项目： | 国家自然科学基金(批准号:50502014,50972032),国家高技术研究发展计划(批准号:2009AA03Z407)资助的课题. |
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| 摘 要： | 给出了一种在非粒子反转条件下量子阱和量子点激光器的红外发射机理. 此种红外发射是基于在同一作用区产生并作为红外场相干源的两种带间跃迁激光场的共振非线性混合. 这种频率下转换机理并不依赖于在半导体激活媒质中的长时相干假定条件,在室温和泵注入电流条件下仍然有效. 频率下转换的固有效率可以达到相当于每个可见光子产生一个红外光子的量子极限值. 根据红外发射的可参变特性,这种非粒子反转的方法尤其适用于长波红外工作范围.
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| 关 键 词： | 半导体异质结 量子相干 红外发射 非线性混合 |
Theoretical investigation of infrared generation mechanism by quantum coherence in low-dimensional semiconductor heterostructures |
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| Sun Wei-Feng,Li Mei-Cheng and Zhao Lian-Cheng.Theoretical investigation of infrared generation mechanism by quantum coherence in low-dimensional semiconductor heterostructures[J].Acta Oceanologica Sinica (in Chinese),2010,32(9):6185-6192. |
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| Authors: | Sun Wei-Feng Li Mei-Cheng and Zhao Lian-Cheng |
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| Institution: | Department of Information Material Science and Technology, School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;Department of Information Material Science and Technology, School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;Department of Information Material Science and Technology, School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | We present an infrared generation mechanism without population inversion between subbands in quantum well and quantum dot lasers. The infrared generation scheme is based on the resonant nonlinear mixing of the two optical laser fields. These two optical fields come from two interband transitions in the same active region and serve as the coherent drive for infrared field. This mechanism of frequency down conversion should work efficiently at room temperature with injection current pumping, not relying on any ad hoc assumptions of long-lived coherence in the semiconductor active medium. Under optimized waveguide and cavity parameters, the intrinsic down-conversion efficiency can reach the limiting quantum value corresponding to one infrared photon generated by one optical photon. Because the proposed infrared generation is parametric, the proposed scheme without population inversion is especially promising for long-wavelength infrared operation. |
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| Keywords: | semiconductor hererostructure quantum coherence infrared generation nonlinear mixing |
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