Si diffusion in zircon |
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| Authors: | D J Cherniak |
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| Institution: | (1) Department of Earth and Environmental Sciences, Rensselaer Polytechnic Institute, Science Center 1W19, 110 8th St., Troy, NY 12180, USA |
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| Abstract: | Self-diffusion of Si under anhydrous conditions at 1 atm has been measured in natural zircon. The source of diffusant for
experiments was a mixture of ZrO2 and 30Si-enriched SiO2 in 1:1 molar proportions; experiments were run in crimped Pt capsules in 1-atm furnaces. 30Si profiles were measured with both Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis with the resonant
nuclear reaction 30Si(p,γ)31P. For Si diffusion normal to c over the temperature range 1,350–1,550°C, we obtain an Arrhenius relation D = 5.8 exp(−702 ± 54 kJ mol−1/RT) m2 s−1 for the NRA measurements, which agrees within uncertainty with an Arrhenius relation determined from the RBS measurements
62 exp(−738 ± 61 kJ mol−1/RT) m2 s−1]. Diffusion of Si parallel to c appears slightly faster, but agrees within experimental uncertainty at most temperatures
with diffusivities for Si normal to c. Diffusion of Si in zircon is similar to that of Ti, but about an order of magnitude faster than diffusion of Hf and two
orders of magnitude faster than diffusion of U and Th. Si diffusion is, however, many orders of magnitude slower than oxygen
diffusion under both dry and hydrothermal conditions, with the difference increasing with decreasing temperature because of
the larger activation energy for Si diffusion. If we consider Hf as a proxy for Zr, given its similar charge and size, we
can rank the diffusivities of the major constituents in zircon as follows: D
Zr < D
Si << D
O, dry < D
O, ‘wet’. |
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| Keywords: | Zircon Silicon Diffusion Rutherford backscattering spectrometry Nuclear reaction analysis |
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