| 24~30 GHz GaN HEMT单片集成单刀双掷开关 |
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| 引用本文： | 曾丁元,朱浩慎,冯文杰,车文荃,薛泉.24~30 GHz GaN HEMT单片集成单刀双掷开关[J].南京气象学院学报,2021,13(4):444-449. |
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| 作者姓名： | 曾丁元 朱浩慎 冯文杰 车文荃 薛泉 |
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| 作者单位： | 华南理工大学 电子与信息学院/广东省毫米波与太赫兹重点实验室, 广州, 510641,华南理工大学 电子与信息学院/广东省毫米波与太赫兹重点实验室, 广州, 510641;琶洲实验室 智能感知与无线传输中心, 广州, 510330,琶洲实验室 智能感知与无线传输中心, 广州, 510330;南京理工大学 电子工程与光电技术学院, 南京, 210094,华南理工大学 电子与信息学院/广东省毫米波与太赫兹重点实验室, 广州, 510641;琶洲实验室 智能感知与无线传输中心, 广州, 510330,华南理工大学 电子与信息学院/广东省毫米波与太赫兹重点实验室, 广州, 510641;琶洲实验室 智能感知与无线传输中心, 广州, 510330 |
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| 基金项目： | 国家重点研发计划（2018YFB1802002）;广东省"珠江人才计划"引进创新创业团队项目（2017ZT07X032） |
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| 摘 要： | 本文研究了一种基于100 nm氮化镓（GaN）高电子迁移率晶体管（HEMT）工艺设计的24~30 GHz单片集成单刀双掷（SPDT）开关.该开关采用1/4波长微带线并联HEMT开关器件的结构,通过采用两级并联HEMT实现低插入损耗同时获得更好的隔离度.测试结果显示,在24~30 GHz的5G毫米波频段内以及0/-5 V的控制电压下,该开关的插入损耗低于1.5 dB,隔离度优于28 dB,输入功率1 dB压缩点大于27 dBm.测试结果能够很好地验证仿真结果.
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| 关 键 词： | GaN HEMT 单片微波集成电路 单刀双掷开关 |
| 收稿时间： | 2021/7/3 0:00:00 |
A 24-30 GHz GaN HEMT SPDT switch MMIC |
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| ZENG Dingyuan,ZHU Haoshen,FENG Wenjie,CHE Wenquan and XUE Quan.A 24-30 GHz GaN HEMT SPDT switch MMIC[J].Journal of Nanjing Institute of Meteorology,2021,13(4):444-449. |
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| Authors: | ZENG Dingyuan ZHU Haoshen FENG Wenjie CHE Wenquan and XUE Quan |
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| Institution: | School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641,School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330,Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330;School of Electronic and Optical Engineering, Nanjing University of Science & Technology, Nanjing 210094,School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330 and School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center, Pazhou Laboratory, Guangzhou 510330 |
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| Abstract: | A 24-30 GHz monolithic integrated Single-Pole Double-Throw (SPDT) switch based on 100 nm Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) process is presented in this paper.This switch adopts a quarter-wavelength microstrip line with parallel HEMT devices topology.By using two-stage parallel HEMT design, the SPDT achieves greater isolation while maintaining good Insertion Loss (IL).With a control voltage of 0/-5 V, the measured IL of this SPDT is less than 1.5 dB, the isolation is greater than 28 dB, and the input power 1 dB compression point is greater than 27 dBm within 24-30 GHz 5G millimeter-wave frequency bands.The measurement results well verify the simulations. |
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| Keywords: | GaN HEMT monolithic microwave integrated circuit (MMIC) SPDT switch |
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