| The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors |
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| 引用本文： | 王鑫华,赵妙,刘新宇,蒲颜,郑英奎,魏珂.The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors[J].海洋学报(英文版),2010,29(9). |
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| 作者姓名： | 王鑫华 赵妙 刘新宇 蒲颜 郑英奎 魏珂 |
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| 作者单位： | Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | Project supported by the National Basic Research Program (973) of China (Grant No. 2010CB327500) and the National Natural Science Foundation of China (Grant Nos. 60976059 and 60890191). |
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