Radiative association of C and P, and Si and P atoms |
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| Authors: | C M Andreazza E P Marinho P D Singh † |
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| Institution: | Universidade Estadual Paulista, IGCE, DEMAC, Rua 10, 2527, CEP 13500-230, Rio Claro, SP, Brazil |
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| Abstract: | The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 × 10−18 to 1.62 × 10−18 cm3 s−1 and from 3.73 × 10−20 to 7.03 × 10−20 cm3 s−1 for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature. |
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| Keywords: | atomic data atomic processes circumstellar matter ISM: molecules |
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