| 硅的间接跃迁双光子吸收系数谱 |
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| 引用本文： | 崔昊杨,李志锋,马法君,陈效双,陆卫.硅的间接跃迁双光子吸收系数谱[J].海洋学报,2010,32(10):7055-7059. |
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| 作者姓名： | 崔昊杨 李志锋 马法君 陈效双 陆卫 |
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| 作者单位： | 上海电力学院计算机与信息工程学院,上海 200090; 中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083 |
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| 基金项目： | 上海市教育委员会科研创新基金(批准号:10YZ158)和上海高校选拔培养优秀青年教师科研专项基金(批准号:SDl08025)资助的课题. |
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| 摘 要： | 利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:
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| 关 键 词： | 双光子吸收 pn结 光伏信号 间接跃迁 |
Two-photon absorption coefficient spectra of indirect transitions in silicon |
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| Cui Hao-Yang,Li Zhi-Feng,Ma Fa-Jun,Chen Xiao-Shuang and Lu Wei.Two-photon absorption coefficient spectra of indirect transitions in silicon[J].Acta Oceanologica Sinica (in Chinese),2010,32(10):7055-7059. |
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| Authors: | Cui Hao-Yang Li Zhi-Feng Ma Fa-Jun Chen Xiao-Shuang and Lu Wei |
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| Institution: | School of Computer Science and Information Engineering, Shanghai University of Electric Power, Shanghai 200090, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | The two-photon absorption coefficient spectra of indirect transitions in silicon have been measured using a picosecond Nd:YAG pulsed laser pumped optical parametric generator, whose wavelength being tunable. By employing the pulsed laser with the photon energy less than the indirect energy gap of silicon, the photovoltaic response between two electrons of the silicon photovoltaic diode has been detected significantly. The peak intensity of the pulsed photovoltaic response shows a quadratic dependence on the incident intensity. This suggests a typical two photon absorption process. A relationship between the pulsed photovoltaic response and the incident intensity has been established with an equivalent RC circuit model to derive the two-photon absorption coefficient, and the spectra can also be obtained by turning the incident wavelengths. The results show that when the incident photon energy change from 0.689 eV to 0.912 eV, the two-photon absorption coefficient increase form 0.42 cm/GW to 1.17 cm/GW. The mechanism for the two-photon absorption coefficient increasing with the incident photon energy can be attributed to the electrons excited from valance band finding an increasing availability of conduction-band states as the photon energy increase from Eig/2 to near Eig. This photon frequency dependence of the two-photon absorption coefficient has been fairly interpreted by the Dinu model. |
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| Keywords: | two-photon absorption pn junction photovoltaic response indirect transition |
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