Study on the negative bias temperature instability effect under dynamic stress |
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| Authors: | Ma Xiao-Hu Cao Yan-Rong and Hao Yue |
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| Institution: | School of Technical Physics, Xidian University, Xi'an 710071, China;School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency. |
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| Keywords: | negative bias temperature instability dynamic stress recovery |
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