首页 | 本学科首页   官方微博 | 高级检索  
     检索      

激发频率对高氢稀释下纳米晶硅薄膜生长特性的影响
引用本文:宋捷,郭艳青,王祥,丁宏林,黄锐.激发频率对高氢稀释下纳米晶硅薄膜生长特性的影响[J].海洋学报,2010,32(10):7378-7382.
作者姓名:宋捷  郭艳青  王祥  丁宏林  黄锐
作者单位:韩山师范学院物理与电子工程系,广东 潮州 521041;韩山师范学院物理与电子工程系,广东 潮州 521041;韩山师范学院物理与电子工程系,广东 潮州 521041;韩山师范学院物理与电子工程系,广东 潮州 521041;韩山师范学院物理与电子工程系,广东 潮州 521041
基金项目:国家自然科学基金(批准号:60806046)和广东省自然科学基金(批准号:8152104101000004)资助的课题.
摘    要:利用等离子体增强化学气相沉积技术,在高氢稀释条件下,研究不同激发频率对纳米晶硅薄膜生长特性的影响.剖面透射电子显微镜(TEM)分析结果显示,不同激发频率下制备的纳米晶硅薄膜晶化区均呈锥状结构生长,但13.56 MHz激发频率下制备的纳米晶硅薄膜最初生长阶段存在非晶态孵化层,即纳米晶硅薄膜的形成经历了由非晶态孵化层到晶态结构层的转变.而高激发频率(40.68 MHz)下硅纳米晶则能直接在非晶态衬底上生长形成.Raman谱和红外吸收谱测量结果表明高激发频率(40.68 MHz)下制备的纳米晶硅薄膜不但具有较高

关 键 词:等离子体增强化学气相沉积  高氢稀释  纳米晶硅
修稿时间:1/6/2010 12:00:00 AM

Influence of excitation frequency on the growth properties of nanocrystalline silicon films with high hydrogen dilution
Song Jie,Guo Yan-Qing,Wang Xiang,Ding Hong-Lin and Huang Rui.Influence of excitation frequency on the growth properties of nanocrystalline silicon films with high hydrogen dilution[J].Acta Oceanologica Sinica (in Chinese),2010,32(10):7378-7382.
Authors:Song Jie  Guo Yan-Qing  Wang Xiang  Ding Hong-Lin and Huang Rui
Institution:Department of Physics and Electrical Engineering, Hanshan Normal University, Guangdong 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Guangdong 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Guangdong 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Guangdong 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Guangdong 521041, China
Abstract:Nanocrystalline silicon films were prepared from SiH4 highly diluted with hydrogen by plasma enhanced chemical vapor deposition. The influence of excitation frequency on their growth properties was investigated. The cross-section transmisson electron microscopy images show that all the films grow with certain fastigiated structure in the crystalline region. However, the films deposited at 13.56 MHz undergo a transition from amorphous incubation layer to crystalline structure. In contrast, for the films deposited at a high excitation frequency (40.68 MHz), nanocrystalline silicon grains can directly grow on the amorphous substrates. Furthermore, the results of Raman spectra and Fourier transform infrared spectroscopy manifest that the nanocrystalline silicon films deposited at high excitation frequency (40.68 MHz) possess high crystalline fraction, low hydrogen content and small microstructure factor.
Keywords:VHF-plasma enhanced chemical vapor deposition  high hydrogen dilution  nanocrystalline silicon
点击此处可从《海洋学报》浏览原始摘要信息
点击此处可从《海洋学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号