| 样品温度对CF+3 与Si表面相互作用影响的分子动力学模拟 |
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| 引用本文： | 宁建平,吕晓丹,赵成利,秦尤敏,贺平逆,A.Bogaerts,苟富君.样品温度对CF+3 与Si表面相互作用影响的分子动力学模拟[J].海洋学报,2010,32(10):7225-7231. |
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| 作者姓名： | 宁建平 吕晓丹 赵成利 秦尤敏 贺平逆 A.Bogaerts 苟富君 |
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| 作者单位： | 贵州大学等离子体与材料表面作用研究所,贵阳 550025; 贵州大学材料科学与冶金工程学院,贵阳 550003;贵州大学等离子体与材料表面作用研究所,贵阳 550025;贵州大学等离子体与材料表面作用研究所,贵阳 550025;贵州大学等离子体与材料表面作用研究所,贵阳 550025; 贵州大学材料科学与冶金工程学院,贵阳 550003;贵州大学等离子体与材料表面作用研究所,贵阳 550025;比利时安特卫普大学化学系PLASMANT课题组,比利时 B-2610;四川大学辐射物理及技术教育部重点实验室,成都 610064; 荷兰皇家科学院等离子体所,荷兰 2300 |
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| 基金项目： | 贵州省优秀青年科技人才培养计划(批准号:700968101)和国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006)资助的课题. |
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| 摘 要： | 利用分子动力学模拟方法研究了不同温度下CFx层对CF+3刻蚀Si表面过程的影响.由模拟数据可知,温度对C和F的沉积有显著的影响;通过提高样品的温度,物理刻蚀得到了加强,而化学刻蚀被减弱.同时,随着温度的升高,Si的刻蚀率相应增加.刻蚀产物中的SiF,SiF2的量随温度的增加而增加,SiF3的量与基体温度没有直接的关系.Si刻蚀率的增加主要是通过提高SiF,SiF2
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| 关 键 词： | 分子动力学 等离子体 刻蚀 样品温度 |
| 修稿时间： | 2/3/2010 12:00:00 AM |
Molecular dynamics simulation of temperature effects on CF+3 etching of Si surface |
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| Institution: | Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China; Material and Metallurgy, College of Guizhou University, Guiyang 550003, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China; Material and Metallurgy, College of Guizhou University, Guiyang 550003, China;Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China;Research Group PLASMANT, University of Antwerp, B-2610 Wilrijk-Antwerp, Belgium;Key Laboretory of Radiation Physics and Technology Ministry of Education, Chengdu 610064, China; Foundation of Material Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands |
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| Abstract: | Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF+3 etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the physical etching is enhanced, while the chemical etching is weakened. It is found that with increasing surface temperature, the etching rate of Si increases. As to the etching products, the yields of SiF and SiF2 increase with temperature, whereas the yield of SiF3 is not sensitive to the surface temperature. And the increase of the etching yield is mainly due to the increased desorption of SiF and SiF2. The comparison shows that the reactive layer plays an important part in the subsequeat impacting, which enhances the etching rate of Si and weakens the chemical etching intensity. |
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| Keywords: | molecular dynamics plasmas etching sample temperature |
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