| 相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究 |
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| 引用本文： | 廖远宝,徐岭,杨菲,刘文强,刘东,徐骏,马忠元,陈坤基.相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究[J].海洋学报,2010,32(9):6563-6568. |
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| 作者姓名： | 廖远宝 徐岭 杨菲 刘文强 刘东 徐骏 马忠元 陈坤基 |
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| 作者单位： | 南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093;南京大学物理学院,南京微结构国家实验室,江苏省光电信息功能材料重点实验室,南京 210093 |
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| 基金项目： | 国家自然科学基金 (批准号:60976001和50872051),江苏省自然科学基金(批准号:BK2008253),国家重点基础研究发展计划(批准号:2007CB935401和2010CB934402)和高等学校博士学科点专项科研基金(批准号:20090091110010)资助的课题. |
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| 摘 要： | 采用射频磁控溅射方法制备了两种用于相变存储器的Ge1Sb2Te4和Ge2Sb2Te5相变薄膜材料,对其结构、电学输运性质和恒温下电阻随时间的变化关系进行了比较和分析.X射线衍射(XRD)和原子力显微镜(AFM)的结果表明:随着退火温度的升高,Ge1Sb2Te4薄膜逐步晶化,由非晶态转变为多晶态,表面出现均匀的、
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| 关 键 词： | 硫系相变材料 Ge1Sb2Te4 Ge2Sb2Te5 |
Study of structural and electrical properties of phase-change materials Ge1Sb2Te4 and Ge2Sb2Te5 thin films |
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| Liao Yuan-Bao,Xu Ling,Yang Fei,Liu Wen-Qiang,Liu Dong,Xu Jun,Ma Zhong-Yuan and Chen Kun-Ji.Study of structural and electrical properties of phase-change materials Ge1Sb2Te4 and Ge2Sb2Te5 thin films[J].Acta Oceanologica Sinica (in Chinese),2010,32(9):6563-6568. |
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| Authors: | Liao Yuan-Bao Xu Ling Yang Fei Liu Wen-Qiang Liu Dong Xu Jun Ma Zhong-Yuan and Chen Kun-Ji |
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| Institution: | Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China;Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | The Ge1Sb2Te4 and Ge2Sb2Te5 thin films were deposited on quartz and silicon substrates by radio frequency magnetron sputtering from Ge1Sb2Te4 and Ge2Sb2Te5alloy targets. Structure properties and electrical transport characteristics of Ge1Sb2Te4 and Ge2Sb2Te5 thin films were studied and compared. X-ray diffraction spectra and atomic force microscopic images were used to characterize the structure of Ge1Sb2Te4 and Ge2Sb2Te5before and after thermal annealing. With increasing annealing temperature, Ge1Sb2Te4crystallized gradually and transformed to polycrystalline state from the amorphous state. Surface of Ge1Sb2Te4 thin films was uniform nanoparticles with roughness less than 10 nm. After thermal annealing, Ge2Sb2Te5 also transformed to polycrystalline state from amorphous state, but its surface morphology did not change significantly compared with the as-deposited film. Results of Hall effect measurement indicated the carrier concentrations of both the as-deposited and annealed films of Ge1Sb2Te4 were three orders of magnitude larger than those of Ge2Sb2Te5. From the above results, we conclude that Ge1Sb2Te4 tends to be more conductive than Ge2Sb2Te5 owing to the larger carrier concentration. Results of resistance versus time measurements under isothermal condition suggested Ge2Sb2Te5is more thermally stable and better fit for data storage than Ge1Sb2Te4. |
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| Keywords: | chalcogenide phase change material Ge1Sb2Te4 Ge2Sb2Te5 |
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