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Determination of High Field Strength Elements, Rb, Sr, Mo, Sb, Cs, Tl and Bi at ng g−1 Levels in Geological Reference Materials by Magnetic Sector ICP-MS after HF/HClO4 High Pressure Digestion
Authors:Zongshou Yu  Philip Robinson  Ashley T Townsend  Carsten Mnker  Anthony J Crawford
Institution:Centre for Ore Deposit Research, University of Tasmania, GPO Box 252-79, Hobart, 7001, Australia;School of Earth Sciences, University of Tasmania, GPO Box 252-79, Hobart, 7001, Australia. e-mail:;Central Science Laboratory, University of Tasmania, GPO Box 252-79, Hobart, 7001, Australia
Abstract:Six low abundance rock reference materials (basalt BIR-1, dunite DTS-1, dolerite DNC-1, peridotite PCC-1, serpentine UB-N and basalt TAFAHI) have been analysed for high field strength elements (Zr, Nb, Hf, Ta, Th and U), Rb, Sr, Mo, Sb, Cs, Tl and Bi at ng g?1 levels (in rock) by magnetic sector inductively coupled plasma-mass spectrometry after HF/HClO4 high pressure decomposition. The adopted method uses only indium as an internal standard. Detection limits were found to be in the range of 0.08 to 16.2 pg ml?1 in solution (equivalent to 0.08 to 16.2 ng g?1 in rock). Our data for high field strength elements, Rb, Sr, Mo, Sb, Cs, Tl and Bi for the six selected low abundance geological reference materials show general agreement with previously published data. Our Ta values in DTS-1 and PCC-1 (1.3 and 0.5 ng g?1) are lower than in previously published studies, providing smooth primitive mantle distribution patterns. Lower values were also found for Tl in BIR-1, DTS-1 and PCC-1 (2, 0.4 and 0.8 ng g?1). Compared with quadrupole ICP-MS studies, the proposed magnetic sector ICP-MS method can generally provide better detection limits, so that the measurement of high field strength elements, Rb, Sr, Mo, Sb, Cs, Tl and Bi at ng g?1 levels can be achieved without pre-concentration, ion exchange separation or other specialised techniques.
Keywords:magnetic sector ICP-MS  geological reference materials  ng g?1 levels  high pressure digestion  memory effects  internal standards
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