High temperature creep of single crystal gadolinium gallium garnet |
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| Authors: | Zichao Wang Shun-ichiro Karato Kiyoshi Fujino |
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| Institution: | 1. Department of Geology and Geophysics, University of Minnesota, 55455, Minneapolis, MN, USA
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| Abstract: | High temperature creep of single crystal gadolinium gallium garnet (GGG) was studied in the temperature range of 1723–1853 K (0.86–0.94 Tm, Tm: melting temperature) and strain rate from 9 · 10?7 s?1 to 2 · 10?5 s?1. The compression tests were made along the 〈100〉 and 〈111〉 orientations. We have performed both constant strain-rate and stress-dip tests. For the 〈100〉 orientation, deformation occurs via the 〈111〉 slip systems. For the 〈111〉 orientation, both the 〈100〉 {010} and the 〈111〉 slip systems can be activated. GGG garnet is very strong under these conditions: σ/μ=(1–3)×10?3 (σ: creep strength, μ: shear modulus). The creep behavior is characterized by a power law with stress exponent n=2.9–3.3 and high activation energies E*=612–743 kJ/mol (E*～45×RTm, at zero stress which decrease with the increase of stress). Stress-dip tests suggest a small internal stress (σi/σ～0.62; σi: internal stress, σ: applied stress) compared to other materials. These results suggest that the high creep strength of GGG is mainly due to difficulty of dislocation glide rather than dislocation climb. |
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