| PTPD／Alq3异质结掺杂器件载流子的复合与发射 |
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| 引用本文： | 聂海,陈祝,吴丽娟.PTPD／Alq3异质结掺杂器件载流子的复合与发射[J].成都信息工程学院学报,2010,25(3):233-236. |
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| 作者姓名： | 聂海 陈祝 吴丽娟 |
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| 作者单位： | 成都信息工程学院通信工程学院,四川,成都,610225;电子科技大学电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 四川省科技支撑计划资助项目，成都信息工程学院科研启动项目资助 |
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| 摘 要： | 以新型的空穴传输材料PTPD（三苯基二胺衍生物聚合物）制成了ITO（氧化铟锡）／PTPD／AIq3（8-羟基喹啉铝）／Mg：Ag异质结电致发光器件，以高效荧光材料Rubrene（荧烯）为掺杂剂和标志物。研究了异质结掺杂有机电致发光器件载流子的复合区域，并基于电致发光（EL）光谱，认为掺杂器件的发射为载流子陷阱和Fbrster能量转换过程的共同作用。
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| 关 键 词： | 微电子 有机电致发光器件 异质结 掺杂 复合 发射 |
Recombination and Emission of Carrier for PTPD/Alq3 Heterostructure Doped Diodes |
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| NIE Hai,CHEN Zhu,WU Li-juan.Recombination and Emission of Carrier for PTPD/Alq3 Heterostructure Doped Diodes[J].Journal of Chengdu University of Information Technology,2010,25(3):233-236. |
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| Authors: | NIE Hai CHEN Zhu WU Li-juan |
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| Institution: | 1. Microelectronics Lab., Department of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; 2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) |
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| Abstract: | ITO/PTPD/Alq3/Mg： Ag heterostructure electroluminescent diodes have been fabricated using a novel poly-TPD for hole transport material. The highly fluorescent rubrene is regard as dopant and mark. Recombination area of carrier has been studied for heterostructure doped diodes. Based on their EL spectra, the emission mechanisms for doped device are carrier trapping and F7 rster energy transfer processes working together. |
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| Keywords: | microelectronics OLED heterostructure doping recombination emission |
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