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From the theoretical analysis of the thermionic emission model of current--voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal--semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last. 相似文献
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首先区分鉴别率与分辨率的相互关系,在此基础上研究地面激光扫描仪鉴别率的检定设备、检定方法。研究结果可为我国地面激光扫描仪检定规程的制定提供参考。 相似文献
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分析了三维图传输特点,以直观性、一览性、精确性为目标,尝试在用3D光栅图传输三维度地理空间数据的过程中,采用符号化方法,有效、准确地传输第三维度数据。 相似文献
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