| Parameter analysis for gate metal—oxide—semiconductor structures of ion-implanted 4H silicon carbide metal—semiconductor field-effect transistors |
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| 引用本文： | 王守国,张义门,张玉明.Parameter analysis for gate metal—oxide—semiconductor structures of ion-implanted 4H silicon carbide metal—semiconductor field-effect transistors[J].海洋学报(英文版),2010,29(9). |
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| 作者姓名： | 王守国 张义门 张玉明 |
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| 作者单位： | School of Information Science and Technology, Northwest University, Xi'an 710127, China;School of Microelectronics, Xidian University, Xi'an 710071, China;School of Microelectronics, Xidian University, Xi'an 710071, China |
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| 收稿时间： | 1/3/2010 12:00:00 AM |
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