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深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N2中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N2中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒 相似文献
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This paper deduces the expression of the Schottky contact capacitance of AlGaN/AlN/GaN high electron mobility transistors (HEMTs), which will help to understand the electron depleting process. Some material parameters related with capacitance--voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier. 相似文献
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基于100 nm硅基氮化镓（GaN）工艺，本文设计并实现了一款工作频段为20~26 GHz且增益平坦的可变增益低噪声放大器（VGLNA）.该放大器采用三级共源级级联来实现高增益，并通过调节第二、第三级的栅极偏置实现增益控制.测试结果表明，该放大器在工作频段内实现了超过20 dB的增益可变范围和±1.5 dB的增益平坦度，在增益可变范围内功耗为126 mW至413 mW.在最大增益状态下，该放大器在整个频段内可实现大于20 dB的小信号增益且噪声系数（NF）为2.95 dB至3.5 dB，平均输出1dB压缩点（OP1dB）约为14.5 dBm.该芯片的面积为2 mm2. 相似文献
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This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements. With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field. With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases. These results reveal that there is a large built-in electric field in the well layer and the exciton-LO-phonon coupling is strongly affected by the thickness of the cap layer. 相似文献
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本文研究了一种基于100 nm氮化镓（GaN）高电子迁移率晶体管（HEMT）工艺设计的24~30 GHz单片集成单刀双掷（SPDT）开关.该开关采用1/4波长微带线并联HEMT开关器件的结构，通过采用两级并联HEMT实现低插入损耗同时获得更好的隔离度.测试结果显示，在24~30 GHz的5G毫米波频段内以及0/-5 V的控制电压下，该开关的插入损耗低于1.5 dB，隔离度优于28 dB，输入功率1 dB压缩点大于27 dBm.测试结果能够很好地验证仿真结果. 相似文献
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高电子迁移率晶体管(HEMT)目前被广泛应用于高灵敏度(低噪声)射电天文接收机中. 在低温制冷环境下,其低噪声性能更佳,但对偏置供电系统要求很高,只有在特定的偏置条件下才能得到最佳的低噪声、高增益、高稳定性.本文提供了一套可调试、高稳定、高可靠性、带远程监控功能的可供多级低温制冷HEMT管的偏置电源的设计思路、方法和制作,使在低温制冷状态下的HEMT管能够稳定、安全、可靠地工作在最佳状态. 相似文献
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We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11-22)-plane. The calculations are performed by the κ• p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction. The results show that the transition energies decrease with the biaxial strains changing from -0.5% to 0.5%. For films of (11-22)-plane, the strains are expected to be anisotropic in the growth plane. Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. The strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the (11-22) plane GaN-based light-emitting diode and lase diode. 相似文献
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