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This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency.  相似文献   
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王冲  全思  马晓华  郝跃  张进城  毛维 《海洋学报》2010,32(10):7333-7337
深入研究了两种增强型AlGaN/GaN高电子迁移率晶体管(HEMT)高温退火前后的直流特性变化.槽栅增强型AlGaN/GaN HEMT在500 ℃ N2中退火5 min后,阈值电压由0.12 V正向移动到0.57 V,器件Schottky反向栅漏电流减小一个数量级.F注入增强型AlGaN/GaN HEMT在 400 ℃ N2中退火2 min后,器件阈值电压由0.23 V负向移动到-0.69 V,栅泄漏电流明显增大.槽栅增强型器件退火过程中Schottky有效势垒  相似文献   
3.
Negative Bias Temperature Instability (NBTI) has become one of the most serious reliability problems of metal--oxide--semiconductor field-effect transistors (MOSFETs). The degradation mechanism and model of NBTI are studied in this paper. From the experimental results, the exponential value 0.25--0.5 which represents the relation of NBTI degradation and stress time is obtained. Based on the experimental results and existing model, the reaction--diffusion model with H + related species generated is deduced, and the exponent 0.5 is obtained. The results suggest that there should be H + generated in the NBTI degradation. With the real time method, the degradation with an exponent 0.5 appears clearly in drain current shift during the first seconds of stress and then verifies that H+ generated during NBTI stress.  相似文献   
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