排序方式: 共有35条查询结果,搜索用时 15 毫秒
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天然半导体矿物由于成分、缺陷复杂,传统测试方法如紫外可见漫反射等难以准确测定其禁带宽度.本文以针铁矿为例,通过第一性原理计算得到纯针铁矿及掺Al针铁矿的电子结构.计算结果显示,纯针铁矿导带底与价带顶均由Fe3d与O2p轨道组成,而当含杂质Al时,Al2p与O2p发生杂化参与了价带组成.在此基础上,利用同步辐射X射线氧的K边吸收谱与发射谱对纯针铁矿及天然针铁矿的能带结构进行了测定.结果表明,天然含Al的针铁矿禁带宽度为2.30eV,小于纯针铁矿(2.57eV).本研究提供了一种测定天然氧化物矿物禁带宽度的新方法,为深入研究天然半导体可见光催化活性产生机制提供了理论依据. 相似文献
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Optical buffers are critical for optical signal processing in future optical packet-switched networks. In this paper, a theoretical study as well as an experimental demonstration on a new optical buffer with large dynamical delay time is carried out based on cascaded double loop optical buffers (DLOBs). It is found that pulse distortion can be restrained by a negative optical control mode when the optical packet is in the loop. Noise analysis indicates that it is feasible to realise a large variable delay range by cascaded DLOBs. These conclusions are validated by the experiment system with 4-stage cascaded DLOBs. Both the theoretical simulations and the experimental results indicate that a large delay range of 1--9999 times the basic delay unit and a fine granularity of 25 ns can be achieved by the cascaded DLOBs. The performance of the cascaded DLOBs is suitable for the all optical networks. 相似文献
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金属硫化物半导体矿物在地壳中分布广泛,其中一些禁带宽度较窄的硫化物矿物,如黄铁矿、黄铜矿和斑铜矿等,在地热梯度下产生的天然热电势可将地球内部热能转化为电能。本文选取黄铁矿、磁黄铁矿、方铅矿、黄铜矿、斑铜矿以及斑铜矿-赤铁矿-辉铜矿集合体等天然硫化物矿物样品,研究了其热电特性。研究结果表明,300~700K下,除磁黄铁矿具有低塞贝克系数和超高电导率而表现出金属导体的电输运行为外,黄铁矿和黄铜矿为n型半导体,斑铜矿和斑铜矿-赤铁矿-辉铜矿集合体为p型半导体,具有150~500μV/K的显著塞贝克系数和5~95 S/cm的电导率,说明样品在地热梯度下具有产生显著热电效应的能力。根据激光闪射法测得的热扩散率以及样品的理论比热、密度计算热导率,斑铜矿及硫化物矿物集合体样品表现出小于1 W/(m·K)的低热导率,说明样品在局部热源影响下可形成较大温差。根据热电基本理论和地热梯度构建天然热电效应模型,对硫化物半导体矿物集合体产生的天然热电势、额外地表电流密度及热电转换效率进行了模拟计算得出经验公式,发现硫化物半导体矿物在300~650 K条件下能产生100 m V左右的天然热电势,产生的最大热电转化率可达4‰,且可以通过偶极电流源模型计算矿物体产生的额外地表电流密度。研究认为硫化物半导体矿物可能作为天然热电转换介质深刻影响地球内部能量的转化与传递过程。 相似文献
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对天然闪锌矿进行了原位高温X射线衍射实验研究,结果表明:闪锌矿受热膨胀,27~675℃温度范围内其膨胀系数为25.61×10-6℃-1;随着温度的升高,在543℃时产生中间物相Zn3O(SO4)2,并分解产生红锌矿ZnO;在797℃时中间物相完全消失,同时出现尖晶石结构的ZnFe2O4;加热至1160℃时的产物为ZnO和ZnFe2O4。实验表明,天然闪锌矿的热改性可产生一定比例的红锌矿(ZnO),其与闪锌矿一起形成二元复合半导体。在光的激发下,该半导体体系产生的光生载流子由一种半导体注入另一种半导体,降低了光生电子-空穴对的复合几率,提高其光催化活性。本文的研究可为热改性提高天然闪锌矿光催化活性提供理论依据。 相似文献
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原子层沉积(ALD) 是下一代超大规模集成电路的首选工艺, 但是Cu籽晶层在阻挡层上的团聚限制了ALD工艺在半导体工业中的应用.目前对Cu在阻挡层TaN表面的团聚机理和行为还缺乏足够的理论认识, 为此利用第一性原理密度泛函理论(DFT) 对不同覆盖度下Cu原子在TaN (111) 表面的吸附能和电荷转移进行了研究, 结果显示, Cu在TaN (111) 表面的吸附强度随着Cu覆盖度的增加而减弱.利用从头算分子动力学模拟了500K温度下Cu单分子层在TaN (111) 表面的吸附动力学行为, 结果表明, 在这一典型的ALD温度下, Cu层在TaN (111) 表面发生团聚, 与实验中的观察结果相符. 相似文献
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采用BHTE 06型热电测量仪,选择磁铁矿、毒砂、黄铁矿、黄铜矿4种代表性天然半导体矿物进行了不同活化温度下热电势的测量。测试结果显示:几种矿物均有“热电势绝对值随活化温度增加而增加”的规律。根据半导体矿物热电特性的基本理论和天然矿物形成条件的分析,笔者认为:地壳内广泛存在天然半导体矿物,绝大多数半导体矿物具有热电特性。由于“孕震发震过程中存在同源电磁场和热场相互作用”,所以伴随孕震发震过程的热场变化可能激发半导体矿物产生热电效应,进而产生新的附加热电势场。这种附加热电势场可能是映震前兆信息源。这说明,广泛存在的天然半导体矿物极有可能是孕震发震过程大地电场异常变化的重要影响因素之一。因此,深入探讨天然半导体矿物的热电效应,对全面理解震前电场前兆异常变化的机理具有启示意义。 相似文献
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The influencing factors and mechanisms of the electromagnetic radiation during rock fracture 总被引:4,自引:0,他引:4
TheinfluencingfactorsandmechanismsoftheelectromagneticradiationduringrockfractureYU-ZHONLIU1)(刘煜洲)YINLIU1)(刘因)YIN-SHENGWANG2... 相似文献
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This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated. The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements. The modification of the spontaneous emission rate, which is reflected in the change of spectral shape and PL lifetime, is clearly observed. While an obvious increase in the PL lifetime is found at most wavelengths in the band gap, a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge. Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal. It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously. This finding provides a simple and effective way for improving the performance of light emitting devices. 相似文献